New technology discovered in the United States to control the orderly growth of molybdenum disulfide atomic layer

[Editor's note]: Semiconductor molybdenum disulfide is one of the three materials required for the manufacture of functional two-dimensional electronic components. They are also expected to become the basic components for the manufacture of invisible devices. Last year, Lou Jun and Prof. Agayan, professors at the Department of Mechanical Engineering and Materials Science at Rice University, said they had successfully manufactured a complex structure of graphene and hexagonal boron nitride interlaced, but if they want to use it They manufacture advanced electronic equipment and need a third material-molybdenum disulfide. They haven't found a good way to plant molybdenum disulfide, and the material structure of many attempts has been inconsistent. The particles of molybdenum disulfide manufactured by chemical vapor deposition are too small to have useful electrical properties. A few days ago, scientists from Rice University and Oak Ridge National Laboratory (ORNL) developed a new method to control the uniform growth of the molybdenum disulfide (MDS) atomic layer, thereby moving towards the manufacture of two-dimensional electronic devices. step.

According to the physicist organization network recently, scientists from Rice University and Oak Ridge National Laboratory (ORNL) have developed a new method that can control the growth of the molybdenum disulfide (MDS) atomic layer in a uniform and consistent manner. Making a two-dimensional electronic device is a step forward. Related research was published in the journal Nature.Materials published this week.

Semiconductor molybdenum disulfide is one of the three materials required for the manufacture of functional two-dimensional electronic components. They are also expected to become the basic components for the manufacture of invisible devices. In the latest research, scientists hope to find out whether large and high-quality atomic thickness molybdenum disulfide flakes can grow in chemical vapor deposition (CVD) furnaces and what their characteristics are. They hope that molybdenum disulfide can be combined with graphene without band gap and insulator hexagonal boron nitride (hBN) to produce field effect transistors, logic integrated circuits, photodetectors and flexible optoelectronic devices.

Last year, Lou Jun and Prof. Agayan, professors at the Department of Mechanical Engineering and Materials Science at Rice University, said they had successfully manufactured a complex structure of graphene and hexagonal boron nitride interlaced, but if they want to use it They manufacture advanced electronic equipment and need a third material-molybdenum disulfide. However, they said: "Molybdenum disulfide will be combined with carbon atoms. We want to combine graphene and molybdenum disulfide (same as hexagonal boron nitride) to create novel two-dimensional semiconductor parts, but because of their different structures. , The growth environment is also different, so there are many difficulties. "

They haven't found a good way to plant molybdenum disulfide, and the material structure of many attempts has been inconsistent. The particles of molybdenum disulfide manufactured by chemical vapor deposition are too small to have useful electrical properties. But in the new method, they noticed that molybdenum disulfide "islands" easily formed in the furnace, and flaws and even dust lumps appeared on the base of the furnace. Rice University graduate student Shina Nayeme said: "Unlike hexagonal boron nitride or graphene, molybdenum disulfide is difficult to nucleate. But we found that this can be controlled by adding artificial edges to the base. The nucleation process, and, between these structures, molybdenum disulfide grows better. The particles grown by the new method are about 100 microns, which is enough for us to deal with in the nanometer scale. "

The team at Oak Ridge National Laboratory used aberration-corrected scanning projection electron microscopy to image the atomic structure of this new material to clearly see individual atoms and defects that changed the electrical properties of the material. Juan-Carlos Eddie Robb of the laboratory said: "In order to improve the properties of two-dimensional materials, it is important to first understand how they are placed together. The microscope equipment at Oak Ridge National Laboratory allows us to see the material for the first time Single atom. "

Researchers at Rice University estimate that there are many ways to combine these substances, not only in the form of two-dimensional layers, but also in the form of three-dimensional superposition. Lou Jun said: "'Natural crystals' are combined by van der Waals forces from the same component. Now, we can make three-dimensional crystals with different components. These different materials have different electrical properties and band gaps. Putting the material on top of another allows us to obtain a new material-we call it Van der Waals solid. We are expected to put it together in any stacking order, which may become a new method in the field of materials science . "

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